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| SHINDENGEN Schottky Rectifiers (SBD) Single DE3S6M 60V 3A FEATURES *oe SMT *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe High current capacity with Small Package APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication OUTLINE DIMENSIONS Case : E-pack Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified T=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 60 V Repetitive Peak Surge Reverse VRRSM Voltage Pulse width 0.5ms, duty 1/40 65 V Average Rectified Forward Current 50Hz sine wave, R-load Ta=31*Z* On alumina substrate IO @ 2.5 A 50Hz sine wave, R-load Tc=117*Z 3 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125*Z 80 A Repetitive Peak Surge Reverse PRRSM PowerPulse width 10Es, Tj=25*Z 330 W *oeElectrical Characteristics (If not specified T=25*Z) Item Symbol Conditions Forward Voltage VF I =3A, Pulse measurement F IR V =V , Pulse measurement Reverse Current R RM Junction Capacitance Cj f=1MHz, =10V RV Thermal Resistance AEjc junction to case AEja junction to ambient Ratings Unit Max.0.58 V Max.2.5 mA Typ.130 pF Max.12 *Z/W Max.55 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd DE3S6M Forward Voltage 10 Forward Current IF [A] 1 Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] Pulse measurement per diode 0.1 0 0.5 1 1.5 2 Forward Voltage VF [V] DE3S6M Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 10 0.1 1 10 Reverse Voltage VR [V] DE3S6M 1000 Reverse Current Tc=150C [MAX] 100 Tc=150C [TYP] Reverse Current IR [mA] Tc=125C [TYP] 10 Tc=100C [TYP] 1 Tc=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 10 20 30 40 50 60 Reverse Voltage VR [V] DE3S6M 10 Reverse Power Dissipation Reverse Power Dissipation PR [W] 8 DC D=0.05 0.1 0.2 0.3 6 4 0.5 2 SIN 0.8 0 0 10 20 30 40 50 60 70 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T DE3S6M 4 3.5 Forward Power Dissipation Forward Power Dissipation PF [W] 3 D=0.8 2.5 0.3 2 1.5 1 0.5 0 0.05 0.1 0.2 SIN 0.5 DC 0 1 2 3 4 5 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T DE3S6M 6 Derating Curve Average Rectified Forward Current IO [A] 5 DC D=0.8 4 0.5 3 SIN 0.3 2 0.2 0.1 1 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 30V 0 0 IO VR tp D=tp /T T DE3S6M 5 Derating Curve Alumina substrate Average Rectified Forward Current IO [A] 4 DC D=0.8 Alumina base Soldering land (leads) 1.5mm x 2.5mm Soldering land (heatsink) 7mm Conductor layer 20m Substrate thickness 0.64mm 3 0.5 SIN 2 0.3 0.2 0.1 1 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 30V 0 0 IO VR tp D=tp /T T DE3S6M 150 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=125C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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